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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE MMBT2222LT1 MMBT2222ALT1 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO 2 EMITTER 1 2 2222 30 60 5.0 600 2222A 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P; ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector-Base Breakdown Voltage MMBT2222 MMBT2222A MMBT2222 V (BR)CBO V (BR)EBO I CEX I CBO -- -- -- -- I EBO I BL -- -- 0.01 0.01 10 10 100 20 nAdc nAdc V (BR)CEO 30 40 60 75 5.0 6.0 -- -- -- -- -- -- 10 Vdc Vdc nAdc Adc Vdc (I C = 10 Adc, I E = 0) MMBT2222A Emitter-Base Breakdown Voltage MMBT2222 (I E = 10 Adc, I C = 0) MMBT2222A Collector Cutoff Current MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50 Vdc, I E = 0) MMBT2222 (V CB = 60 Vdc, I E = 0) MMBT2222A (V CB = 50 Vdc, I E = 0, T A = 125C) MMBT2222 (V CB = 60 Vdc, I E = 0, T A = 125C) MMBT2222A Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0) MMBT2222A Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) MMBT2222A 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. O4-1/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 35 50 75 35 100 50 30 40 VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A V BE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A -- 0.6 -- -- fT C obo C ibo h ie h re h fe h oe 250 300 -- -- -- 2.0 0.25 --- 50 75 5.0 25 -- -- 1.3 1.2 2.6 2.0 -- -- 8.0 30 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 MHz pF pF k X 10 -- mhos -4 Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc,T A= -55C ) (I C = 150 mAdc, V CE = 10 Vdc) (3) (I C = 150 mAdc, V CE = 1.0 Vdc) (3) (I C = 500 mAdc, V CE = 10 Vdc)(3) Collector-Emitter Saturation Voltage(3) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) Base-Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) -- -- -- -- 300 -- -- -- Vdc -- -- -- -- 0.4 0.3 1.6 1.0 Vdc MMBT2222A only MMBT2222 MMBT2222A SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(4) (I C = 20mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Curren Base Time Comstant (V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) Noise Figure(VCE=10Vdc, IC=100Adc, RS=1.0k, f =1.0kHz) MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A rb, C C NF ps dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30 Vdc, V EB(off) = - 0.5 Vdc I C = 150 mAdc, I B1 = 15 mAdc) (V CC = 30 Vdc, I C = 150 mAdc I B1 = I B2 = 15 mAdc) td tr ts tf -- -- -- -- 10 25 225 60 ns ns 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. 4.f T is defined as the frequency at which h fe extrapolates to unity. O4-2/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V + 16 V 0 1.0 to 100s, DUTY CYCLE ~ 2% ~ 200 + 16 V 0 1.0 to 100s, DUTY CYCLE ~ 2% ~ 200 1.0 k C S* < 10 pF - 2.0V <2.0 ns -14 V < 20 ns 1.0 k C S*< 10 pF 1N914 - 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time 1000 700 h FE , DC CURRENT GAIN 500 300 200 V CE= 10 V V CE=1.0 V T J = +125C +25C 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 700 1.0k -55C I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 T J = 25C 0.8 0.6 0.4 I C=1.0 mA 10 mA 100mA 500mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region O4-3/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 200 100 70 50 I C /I B = 10 TJ= 25C t , RISE TIME (ns) t r @V CC= 30V t d@V EB(off) = 2.0V t d@V EB(off) =0 100 70 50 t 's= t s-1/8 t f V CC= 30V I C/ I B= 10 I B1 = I B2 TJ= 25C t , TIME (ns) 30 20 30 20 tf 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn - Off Time 10 10 R S = OPTIMUM 8 I C = 1.0 mA, R S = 150 I C = 500 A, R S = 200 I C = 100 A, R S = 2.0 k I C = 50 A, R S = 4.0 k RS = SOURCE RS = RESISTANCE f = 1.0 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 6 6 I C=50 A 100 A 500 A 1.0 mA 4 4 2 2 0 0.01 0.02 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (k) Figure 7. Frequency Effects 30 20 Figure 8. Source Resistance Effects f T ,CURRENT- GAIN BANDWIDTH PRODUCT (MHz) 500 300 V CE = 20 V T J = 25C CAPACITANCE (pF) C eb 10 7.0 5.0 200 100 C cb 3.0 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 70 50 1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitance Figure 10. Current- Gain Bandwidth Product O4-4/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 10 +0.5 T J = 25C 0.8 0 R VC for V CE(sat) V, VOLTAGE ( VOLTS ) V BE(sat) @ I C /I B =10 0.6 COEFFICIENT (mV/ C) 1.0 V - 0.5 V BE(on) @ V CE =10 V 0.4 -1.0 -1.5 0.2 -2.0 R VB for V BE V CE(sat) @ I C /I B =10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k - 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients O4-5/5 |
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